Temperature Distribution in TaO(x) Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy

[Image: see text] Understanding the physical changes during electroformation and switching processes in transition-metal-oxide-based non-volatile memory devices is important for advancing this technology. Relatively few characteristics of these devices have been assessed in operando. In this work, w...

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Detalles Bibliográficos
Autores principales: Meng, Jingjia, Goodwill, Jonathan M., Strelcov, Evgheni, Bao, Kefei, McClelland, Jabez J., Skowronski, Marek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10134484/
https://www.ncbi.nlm.nih.gov/pubmed/37124236
http://dx.doi.org/10.1021/acsaelm.3c00229

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10134484/
https://www.ncbi.nlm.nih.gov/pubmed/37124236
http://dx.doi.org/10.1021/acsaelm.3c00229

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