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Temperature Distribution in TaO(x) Resistive Switching Devices Assessed In Operando by Scanning Thermal Microscopy
[Image: see text] Understanding the physical changes during electroformation and switching processes in transition-metal-oxide-based non-volatile memory devices is important for advancing this technology. Relatively few characteristics of these devices have been assessed in operando. In this work, w...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10134484/ https://www.ncbi.nlm.nih.gov/pubmed/37124236 http://dx.doi.org/10.1021/acsaelm.3c00229 |