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Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate

The molecular doping (MD) process is based on the deposition of dopant-containing molecules over the surface of a semiconductor substrate, followed by the thermal diffusion step. Previous studies suggest that, during the deposition, the molecules nucleate clusters, and at prolonged deposition times,...

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Autores principales: Pizzone, Mattia, Grimaldi, Maria Grazia, La Magna, Antonino, Scalese, Silvia, Adam, Jost, Puglisi, Rosaria A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10138297/
https://www.ncbi.nlm.nih.gov/pubmed/37108041
http://dx.doi.org/10.3390/ijms24086877
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author Pizzone, Mattia
Grimaldi, Maria Grazia
La Magna, Antonino
Scalese, Silvia
Adam, Jost
Puglisi, Rosaria A.
author_facet Pizzone, Mattia
Grimaldi, Maria Grazia
La Magna, Antonino
Scalese, Silvia
Adam, Jost
Puglisi, Rosaria A.
author_sort Pizzone, Mattia
collection PubMed
description The molecular doping (MD) process is based on the deposition of dopant-containing molecules over the surface of a semiconductor substrate, followed by the thermal diffusion step. Previous studies suggest that, during the deposition, the molecules nucleate clusters, and at prolonged deposition times, they grow into self-assembled layers on the sample to be doped. Little is known about the influence of nucleation kinetics on the final properties of these layers and how they change when we modify the solution properties. In this work, we examine the nucleation rate and the molecular surface coverage kinetics of diethyl-propyl phosphonate on silicon at different solution concentrations and how these conditions influence the final electrical properties of the doped samples. We present a high-resolution morphological characterization of the as-deposited molecules together with the electrical results of the final doped samples. The experimental results show a non-obvious behavior, explained through understanding of the competition between the molecules’ physisorption and chemisorption mechanisms. As a consequence, due to the deeper knowledge of the deposition phase, a finer tuning of the conductive properties of MD-doped samples is achieved.
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spelling pubmed-101382972023-04-28 Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate Pizzone, Mattia Grimaldi, Maria Grazia La Magna, Antonino Scalese, Silvia Adam, Jost Puglisi, Rosaria A. Int J Mol Sci Article The molecular doping (MD) process is based on the deposition of dopant-containing molecules over the surface of a semiconductor substrate, followed by the thermal diffusion step. Previous studies suggest that, during the deposition, the molecules nucleate clusters, and at prolonged deposition times, they grow into self-assembled layers on the sample to be doped. Little is known about the influence of nucleation kinetics on the final properties of these layers and how they change when we modify the solution properties. In this work, we examine the nucleation rate and the molecular surface coverage kinetics of diethyl-propyl phosphonate on silicon at different solution concentrations and how these conditions influence the final electrical properties of the doped samples. We present a high-resolution morphological characterization of the as-deposited molecules together with the electrical results of the final doped samples. The experimental results show a non-obvious behavior, explained through understanding of the competition between the molecules’ physisorption and chemisorption mechanisms. As a consequence, due to the deeper knowledge of the deposition phase, a finer tuning of the conductive properties of MD-doped samples is achieved. MDPI 2023-04-07 /pmc/articles/PMC10138297/ /pubmed/37108041 http://dx.doi.org/10.3390/ijms24086877 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Pizzone, Mattia
Grimaldi, Maria Grazia
La Magna, Antonino
Scalese, Silvia
Adam, Jost
Puglisi, Rosaria A.
Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate
title Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate
title_full Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate
title_fullStr Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate
title_full_unstemmed Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate
title_short Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate
title_sort molecule clustering dynamics in the molecular doping process of si(111) with diethyl-propyl-phosphonate
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10138297/
https://www.ncbi.nlm.nih.gov/pubmed/37108041
http://dx.doi.org/10.3390/ijms24086877
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