Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) and annealing severely affect the reliability of the chips. Traditional methods o...

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Detalles Bibliográficos
Autores principales: Sun, Qimeng, Yang, Dekun, Liu, Tianjian, Liu, Jianhong, Wang, Shizhao, Hu, Sizhou, Liu, Sheng, Song, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10140062/
https://www.ncbi.nlm.nih.gov/pubmed/37123536
http://dx.doi.org/10.1038/s41378-023-00529-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10140062/
https://www.ncbi.nlm.nih.gov/pubmed/37123536
http://dx.doi.org/10.1038/s41378-023-00529-9

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