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Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning
The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) and annealing severely affect the reliability of the chips. Traditional methods o...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10140062/ https://www.ncbi.nlm.nih.gov/pubmed/37123536 http://dx.doi.org/10.1038/s41378-023-00529-9 |