The Process and Mechanism of Preparing Nanoporous Silicon: Helium Ion Implantation

Ion implantation is an effective way to control performance in semiconductor technology. In this paper, the fabrication of 1~5 nm porous silicon by helium ion implantation was systemically studied, and the growth mechanism and regulation mechanism of helium bubbles in monocrystalline silicon at low...

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Detalles Bibliográficos
Autores principales: Wang, Jianguang, Zhu, Kelin, Wu, Xiaoling, Cheng, Guoan, Zheng, Ruiting
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10141629/
https://www.ncbi.nlm.nih.gov/pubmed/37110909
http://dx.doi.org/10.3390/nano13081324

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10141629/
https://www.ncbi.nlm.nih.gov/pubmed/37110909
http://dx.doi.org/10.3390/nano13081324

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