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The Process and Mechanism of Preparing Nanoporous Silicon: Helium Ion Implantation
Ion implantation is an effective way to control performance in semiconductor technology. In this paper, the fabrication of 1~5 nm porous silicon by helium ion implantation was systemically studied, and the growth mechanism and regulation mechanism of helium bubbles in monocrystalline silicon at low...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10141629/ https://www.ncbi.nlm.nih.gov/pubmed/37110909 http://dx.doi.org/10.3390/nano13081324 |