Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

InGaN quantum dots (QDs) have attracted significant attention as a promising material for high-efficiency micro-LEDs. In this study, plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow self-assembled InGaN QDs for the fabrication of green micro-LEDs. The InGaN QDs exhibited a high densi...

Descripción completa

Detalles Bibliográficos
Autores principales: Gu, Ying, Gong, Yi, Zhang, Peng, Hua, Haowen, Jin, Shan, Yang, Wenxian, Zhu, Jianjun, Lu, Shulong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142470/
https://www.ncbi.nlm.nih.gov/pubmed/37110930
http://dx.doi.org/10.3390/nano13081346

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142470/
https://www.ncbi.nlm.nih.gov/pubmed/37110930
http://dx.doi.org/10.3390/nano13081346

Ejemplares similares