Cargando…

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

InGaN quantum dots (QDs) have attracted significant attention as a promising material for high-efficiency micro-LEDs. In this study, plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow self-assembled InGaN QDs for the fabrication of green micro-LEDs. The InGaN QDs exhibited a high densi...

Descripción completa

Detalles Bibliográficos
Autores principales:	Gu, Ying, Gong, Yi, Zhang, Peng, Hua, Haowen, Jin, Shan, Yang, Wenxian, Zhu, Jianjun, Lu, Shulong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142470/ https://www.ncbi.nlm.nih.gov/pubmed/37110930 http://dx.doi.org/10.3390/nano13081346

Ejemplares similares

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy
por: Zhang, Xue, et al.
Publicado: (2022)

Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy
por: Nurzal, Nurzal, et al.
Publicado: (2023)

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
por: Liu, Shuangtao, et al.
Publicado: (2019)

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
por: Ma, Dingyu, et al.
Publicado: (2017)

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs
por: Barettin, Daniele, et al.
Publicado: (2023)

Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
por: Liu, Guangyu, et al.
Publicado: (2011)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Dual-wavelength visible photodetector based on vertical (In,Ga)N nanowires grown by molecular beam epitaxy
por: Zhang, Jianya, et al.
Publicado: (2021)

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
por: Makhloufi, Hajer, et al.
Publicado: (2014)

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
por: Hajdel, Mateusz, et al.
Publicado: (2021)

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy
por: Henini, M
Publicado: (2006)

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
por: Wang, Tao, et al.
Publicado: (2018)

Structural and optical analyses for InGaN-based red micro-LED
por: Hsiao, Fu-He, et al.
Publicado: (2023)

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure
por: Yu, Jiadong, et al.
Publicado: (2016)

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
por: Lu, Shulong, et al.
Publicado: (2011)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
por: Li, Hongjian, et al.
Publicado: (2016)

A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)
por: Bai, Jie, et al.
Publicado: (2020)

Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
por: Bui, Ha Quoc Thang, et al.
Publicado: (2019)

Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
por: Linares-García, Gabriel, et al.
Publicado: (2016)

Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography
por: Ilahi, Bouraoui, et al.
Publicado: (2016)

Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Santiago, Svette Reina Merden, et al.
Publicado: (2018)

Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
por: Benyoucef, Mohamed, et al.
Publicado: (2012)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density
por: Lu, Shiqiang, et al.
Publicado: (2021)

Correction: Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Merden Santiago, Svette Reina, et al.
Publicado: (2018)

Study on the effect of size on InGaN red micro-LEDs
por: Horng, Ray-Hua, et al.
Publicado: (2022)

Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates
por: Bai, J., et al.
Publicado: (2019)

High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
por: Bietti, Sergio, et al.
Publicado: (2020)

An InN/InGaN Quantum Dot Electrochemical Biosensor for Clinical Diagnosis
por: Alvi, Naveed ul Hassan, et al.
Publicado: (2013)

Modeling and Epitaxial Growth of Homogeneous Long-InGaN Nanowire Structures
por: Kim, Sung-Un, et al.
Publicado: (2020)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
por: Christian, George, et al.
Publicado: (2018)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al(0.3)Ga(0.7)As Quantum Dots Grown by Droplet Epitaxy
por: Yeo, Inah, et al.
Publicado: (2020)

Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots
por: Li, Xiaohui, et al.
Publicado: (2023)

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
por: Kundys, Dmytro, et al.
Publicado: (2016)

Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots
por: Wei, Xiongliang, et al.
Publicado: (2023)

Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
por: Sun, Xiaojuan, et al.
Publicado: (2012)

Self-assembled Bismuth Selenide (Bi(2)Se(3)) quantum dots grown by molecular beam epitaxy
por: Claro, Marcel S., et al.
Publicado: (2019)

CuInSe(2) quantum dots grown by molecular beam epitaxy on amorphous SiO(2) surfaces
por: Limborço, Henrique, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_1vsdgki7jfqftdad92rbq1f218