Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap than Si, so a heterojunction with SiGe(source...

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Detalles Bibliográficos
Autores principales: Chen, Qing, Sun, Rong, Miao, Ruixia, Liu, Hanxiao, Yang, Lulu, Qi, Zengwei, He, Wei, Li, Jianwei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142619/
https://www.ncbi.nlm.nih.gov/pubmed/37421017
http://dx.doi.org/10.3390/mi14040784

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10142619/
https://www.ncbi.nlm.nih.gov/pubmed/37421017
http://dx.doi.org/10.3390/mi14040784

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