Experimental Study on Shear Rheological Polishing of Si Surface of 4H-SiC Wafer

In this study, shear rheological polishing was used to polish the Si surface of six-inch 4H-SiC wafers to improve polishing efficiency. The surface roughness of the Si surface was the main evaluation index, and the material removal rate was the secondary evaluation index. An experiment was designed...

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Detalles Bibliográficos
Autores principales: Li, Peng, Yuan, Julong, Zhu, Minghui, Zhou, Jianxing, Lyu, Binghai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143364/
https://www.ncbi.nlm.nih.gov/pubmed/37421085
http://dx.doi.org/10.3390/mi14040853

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143364/
https://www.ncbi.nlm.nih.gov/pubmed/37421085
http://dx.doi.org/10.3390/mi14040853

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