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Experimental Study on Shear Rheological Polishing of Si Surface of 4H-SiC Wafer
In this study, shear rheological polishing was used to polish the Si surface of six-inch 4H-SiC wafers to improve polishing efficiency. The surface roughness of the Si surface was the main evaluation index, and the material removal rate was the secondary evaluation index. An experiment was designed...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10143364/ https://www.ncbi.nlm.nih.gov/pubmed/37421085 http://dx.doi.org/10.3390/mi14040853 |