Threshold-Voltage Extraction Methods for Atomically Deposited Disordered ZnO Thin-Film Transistors

In this paper, we present a threshold-voltage extraction method for zinc oxide (ZnO) thin-film transistors (TFTs). Bottom-gate atomic-layer-deposited ZnO TFTs exhibit typical n-type enhancement-mode transfer characteristics but a gate-voltage-dependent, unreliable threshold voltage. We posit that th...

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Detalles Bibliográficos
Autor principal: Yoon, Minho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10144086/
https://www.ncbi.nlm.nih.gov/pubmed/37109775
http://dx.doi.org/10.3390/ma16082940

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10144086/
https://www.ncbi.nlm.nih.gov/pubmed/37109775
http://dx.doi.org/10.3390/ma16082940

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