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Threshold-Voltage Extraction Methods for Atomically Deposited Disordered ZnO Thin-Film Transistors
In this paper, we present a threshold-voltage extraction method for zinc oxide (ZnO) thin-film transistors (TFTs). Bottom-gate atomic-layer-deposited ZnO TFTs exhibit typical n-type enhancement-mode transfer characteristics but a gate-voltage-dependent, unreliable threshold voltage. We posit that th...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10144086/ https://www.ncbi.nlm.nih.gov/pubmed/37109775 http://dx.doi.org/10.3390/ma16082940 |