High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature

H doping can enhance the performance of ZnO thin-film transistors (TFTs) to a certain extent, and the design of double active layers is an effective way to further improve a device’s performance. However, there are few studies on the combination of these two strategies. We fabricated TFTs with ZnO:H...

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Detalles Bibliográficos
Autores principales: Wang, Daoqin, Jiang, Zongjin, Li, Linhan, Zhu, Deliang, Wang, Chunfeng, Han, Shun, Fang, Ming, Liu, Xinke, Liu, Wenjun, Cao, Peijiang, Lu, Youming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10145049/
https://www.ncbi.nlm.nih.gov/pubmed/37111007
http://dx.doi.org/10.3390/nano13081422

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10145049/
https://www.ncbi.nlm.nih.gov/pubmed/37111007
http://dx.doi.org/10.3390/nano13081422

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