Atomistic Insights on Surface Quality Control via Annealing Process in AlGaN Thin Film Growth

Aluminum gallium nitride (AlGaN) is a nanohybrid semiconductor material with a wide bandgap, high electron mobility, and high thermal stability for various applications including high-power electronics and deep ultraviolet light-emitting diodes. The quality of thin films greatly affects their perfor...

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Detalles Bibliográficos
Autores principales: Peng, Qing, Ma, Zhiwei, Cai, Shixian, Zhao, Shuai, Chen, Xiaojia, Cao, Qiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10145358/
https://www.ncbi.nlm.nih.gov/pubmed/37110967
http://dx.doi.org/10.3390/nano13081382

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10145358/
https://www.ncbi.nlm.nih.gov/pubmed/37110967
http://dx.doi.org/10.3390/nano13081382

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