Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter

In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics. It features a particular shortened P+ emitter (SE) in the diode part of RC-IGBT. Firstly, the shortened P+ emitt...

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Detalles Bibliográficos
Autores principales: Wu, Wei, Li, Yansong, Yu, Mingkang, Gao, Chongbing, Shu, Yulu, Chen, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10145423/
https://www.ncbi.nlm.nih.gov/pubmed/37421106
http://dx.doi.org/10.3390/mi14040873

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10145423/
https://www.ncbi.nlm.nih.gov/pubmed/37421106
http://dx.doi.org/10.3390/mi14040873

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