Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate

We fabricated an air-tunnel structure between a gallium nitride (GaN) layer and trapezoid-patterned sapphire substrate (TPSS) through the in situ carbonization of a photoresist layer to enable rapid chemical lift-off (CLO). A trapezoid-shaped PSS was used, which is advantageous for epitaxial growth...

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Detalles Bibliográficos
Autores principales: Ahn, Min-joo, Shim, Kyu-yeon, Jeong, Woo-seop, Kang, Seongho, Kim, Hwayoung, Cho, Seunghee, Byun, Dongjin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10146289/
https://www.ncbi.nlm.nih.gov/pubmed/37420986
http://dx.doi.org/10.3390/mi14040753

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10146289/
https://www.ncbi.nlm.nih.gov/pubmed/37420986
http://dx.doi.org/10.3390/mi14040753

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