Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media

SiO(2) films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO(2) films. On the top of the graphene layer, either continuous HfO(2) or SiO(2) films were grown by plasma...

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Detalles Bibliográficos
Autores principales: Kahro, Tauno, Raudonen, Kristina, Merisalu, Joonas, Tarre, Aivar, Ritslaid, Peeter, Kasikov, Aarne, Jõgiaas, Taivo, Käämbre, Tanel, Otsus, Markus, Kozlova, Jekaterina, Alles, Harry, Tamm, Aile, Kukli, Kaupo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10146930/
https://www.ncbi.nlm.nih.gov/pubmed/37110908
http://dx.doi.org/10.3390/nano13081323

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