Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance

Herein, we report the method of molecular-beam-epitaxial growth (MBE) for precisely regulating the terminal surface with different exposed atoms on indium telluride (InTe) and studied the electrocatalytic performances toward hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The...

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Detalles Bibliográficos
Autores principales: Wu, Jie, Shao, Zhiyu, Zheng, Beining, Zhang, Yuan, Yao, Xiangdong, Huang, Keke, Feng, Shouhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153078/
https://www.ncbi.nlm.nih.gov/pubmed/37143792
http://dx.doi.org/10.1039/d3na00142c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153078/
https://www.ncbi.nlm.nih.gov/pubmed/37143792
http://dx.doi.org/10.1039/d3na00142c

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