Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance

Herein, we report the method of molecular-beam-epitaxial growth (MBE) for precisely regulating the terminal surface with different exposed atoms on indium telluride (InTe) and studied the electrocatalytic performances toward hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The...

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Detalles Bibliográficos
Autores principales: Wu, Jie, Shao, Zhiyu, Zheng, Beining, Zhang, Yuan, Yao, Xiangdong, Huang, Keke, Feng, Shouhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153078/
https://www.ncbi.nlm.nih.gov/pubmed/37143792
http://dx.doi.org/10.1039/d3na00142c
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author Wu, Jie
Shao, Zhiyu
Zheng, Beining
Zhang, Yuan
Yao, Xiangdong
Huang, Keke
Feng, Shouhua
author_facet Wu, Jie
Shao, Zhiyu
Zheng, Beining
Zhang, Yuan
Yao, Xiangdong
Huang, Keke
Feng, Shouhua
author_sort Wu, Jie
collection PubMed
description Herein, we report the method of molecular-beam-epitaxial growth (MBE) for precisely regulating the terminal surface with different exposed atoms on indium telluride (InTe) and studied the electrocatalytic performances toward hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The improved performances result from the exposed In or Te atoms cluster, which affects the conductivity and active sites. This work provides insights into the comprehensive electrochemical attributes of layered indium chalcogenides and exhibits a new route for catalyst synthesis.
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spelling pubmed-101530782023-05-03 Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance Wu, Jie Shao, Zhiyu Zheng, Beining Zhang, Yuan Yao, Xiangdong Huang, Keke Feng, Shouhua Nanoscale Adv Chemistry Herein, we report the method of molecular-beam-epitaxial growth (MBE) for precisely regulating the terminal surface with different exposed atoms on indium telluride (InTe) and studied the electrocatalytic performances toward hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). The improved performances result from the exposed In or Te atoms cluster, which affects the conductivity and active sites. This work provides insights into the comprehensive electrochemical attributes of layered indium chalcogenides and exhibits a new route for catalyst synthesis. RSC 2023-03-22 /pmc/articles/PMC10153078/ /pubmed/37143792 http://dx.doi.org/10.1039/d3na00142c Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
Wu, Jie
Shao, Zhiyu
Zheng, Beining
Zhang, Yuan
Yao, Xiangdong
Huang, Keke
Feng, Shouhua
Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance
title Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance
title_full Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance
title_fullStr Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance
title_full_unstemmed Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance
title_short Controlling the terminal layer atom of InTe for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance
title_sort controlling the terminal layer atom of inte for enhanced electrochemical oxygen evolution reaction and hydrogen evolution reaction performance
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153078/
https://www.ncbi.nlm.nih.gov/pubmed/37143792
http://dx.doi.org/10.1039/d3na00142c
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