Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect

With increasing Al mole fraction, n-contact has become an important issue limiting the development of Al-rich AlGaN-based devices. In this work, we have proposed an alternative strategy to optimize the metal/n-AlGaN contact by introducing a heterostructure with a polarization effect and by etching a...

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Detalles Bibliográficos
Autores principales: Chen, Yuxuan, Jiang, Ke, Sun, Xiaojuan, Zhang, Zi-Hui, Zhang, Shanli, Ben, Jianwei, Wang, Bingxiang, Guo, Long, Li, Dabing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153480/
https://www.ncbi.nlm.nih.gov/pubmed/37143800
http://dx.doi.org/10.1039/d2na00813k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153480/
https://www.ncbi.nlm.nih.gov/pubmed/37143800
http://dx.doi.org/10.1039/d2na00813k

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