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Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect
With increasing Al mole fraction, n-contact has become an important issue limiting the development of Al-rich AlGaN-based devices. In this work, we have proposed an alternative strategy to optimize the metal/n-AlGaN contact by introducing a heterostructure with a polarization effect and by etching a...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
RSC
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153480/ https://www.ncbi.nlm.nih.gov/pubmed/37143800 http://dx.doi.org/10.1039/d2na00813k |