Complications in silane-assisted GaN nanowire growth

Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high tempera...

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Detalles Bibliográficos
Autores principales: Jiang, Nian, Ghosh, Saptarsi, Frentrup, Martin, Fairclough, Simon M., Loeto, Kagiso, Kusch, Gunnar, Oliver, Rachel A., Joyce, Hannah J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153487/
https://www.ncbi.nlm.nih.gov/pubmed/37143793
http://dx.doi.org/10.1039/d2na00939k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153487/
https://www.ncbi.nlm.nih.gov/pubmed/37143793
http://dx.doi.org/10.1039/d2na00939k

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