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Complications in silane-assisted GaN nanowire growth
Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution of the sapphire substrates during the high tempera...
Autores principales: | Jiang, Nian, Ghosh, Saptarsi, Frentrup, Martin, Fairclough, Simon M., Loeto, Kagiso, Kusch, Gunnar, Oliver, Rachel A., Joyce, Hannah J. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10153487/ https://www.ncbi.nlm.nih.gov/pubmed/37143793 http://dx.doi.org/10.1039/d2na00939k |
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