Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique

We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2–4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission elec...

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Detalles Bibliográficos
Autores principales: Shu, Qijiang, Huang, Pengru, Yang, Fuhua, Yang, Linjing, Chen, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10169779/
https://www.ncbi.nlm.nih.gov/pubmed/37161032
http://dx.doi.org/10.1038/s41598-023-34284-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10169779/
https://www.ncbi.nlm.nih.gov/pubmed/37161032
http://dx.doi.org/10.1038/s41598-023-34284-8

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