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Study on crystal growth of Ge/Si quantum dots at different Ge deposition by using magnetron sputtering technique
We investigated the growth and evolution of Si-based Ge quantum dots (Ge/Si QDs) under low Ge deposition (1.2–4.4 nm thick) using magnetron sputtering. The morphology and structure of QDs were analyzed with the help of an atomic force microscope (AFM), scanning electron microscope, transmission elec...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10169779/ https://www.ncbi.nlm.nih.gov/pubmed/37161032 http://dx.doi.org/10.1038/s41598-023-34284-8 |