Ferroelectricity and Oxide Reliability of Stacked Hafnium–Zirconium Oxide Devices

In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that th...

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Detalles Bibliográficos
Autores principales: Liao, Ruo-Yin, Chen, Hsuan-Han, Lin, Ping-Yu, Liang, Ting-An, Su, Kuan-Hung, Lin, I-Cheng, Wen, Chen-Hao, Chou, Wu-Ching, Hsu, Hsiao-Hsuan, Cheng, Chun-Hu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179733/
https://www.ncbi.nlm.nih.gov/pubmed/37176188
http://dx.doi.org/10.3390/ma16093306

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179733/
https://www.ncbi.nlm.nih.gov/pubmed/37176188
http://dx.doi.org/10.3390/ma16093306

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