Sol-Gel Derived Tungsten Doped VO(2) Thin Films on Si Substrate with Tunable Phase Transition Properties

Vanadium dioxide (VO(2)) with semiconductor-metal phase transition characteristics has presented great application potential in various optoelectrical smart devices. However, the preparation of doped VO(2) film with a lower phase transition threshold on Si substrate needs more investigation for the...

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Detalles Bibliográficos
Autores principales: Ding, Xiaoming, Li, Yanli, Zhang, Yubo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179862/
https://www.ncbi.nlm.nih.gov/pubmed/37175188
http://dx.doi.org/10.3390/molecules28093778

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179862/
https://www.ncbi.nlm.nih.gov/pubmed/37175188
http://dx.doi.org/10.3390/molecules28093778

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