Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer co...

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Detalles Bibliográficos
Autores principales: Weng, You-Chen, Hsiao, Ming-Yao, Lin, Chun-Hsiung, Lan, Yu-Pin, Chang, Edward-Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179890/
https://www.ncbi.nlm.nih.gov/pubmed/37176258
http://dx.doi.org/10.3390/ma16093376

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10179890/
https://www.ncbi.nlm.nih.gov/pubmed/37176258
http://dx.doi.org/10.3390/ma16093376

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