Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces

Gallium nitride is a wide-direct-bandgap semiconductor suitable for the creation of modern optoelectronic devices and radiation tolerant detectors. However, formation of dislocations is inevitable in MOCVD GaN materials. Dislocations serve as accumulators of point defects within space charge regions...

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Detalles Bibliográficos
Autores principales: Ceponis, Tomas, Pavlov, Jevgenij, Kadys, Arunas, Vaitkevicius, Augustas, Gaubas, Eugenijus
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180187/
https://www.ncbi.nlm.nih.gov/pubmed/37176305
http://dx.doi.org/10.3390/ma16093424

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180187/
https://www.ncbi.nlm.nih.gov/pubmed/37176305
http://dx.doi.org/10.3390/ma16093424

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