Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures

Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the numbe...

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Detalles Bibliográficos
Autores principales: Bulgakov, Alexander V., Beránek, Jiří, Volodin, Vladimir A., Cheng, Yuzhu, Levy, Yoann, Nagisetty, Siva S., Zukerstein, Martin, Popov, Alexander A., Bulgakova, Nadezhda M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180334/
https://www.ncbi.nlm.nih.gov/pubmed/37176457
http://dx.doi.org/10.3390/ma16093572

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180334/
https://www.ncbi.nlm.nih.gov/pubmed/37176457
http://dx.doi.org/10.3390/ma16093572

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