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Ultrafast Infrared Laser Crystallization of Amorphous Si/Ge Multilayer Structures
Silicon–germanium multilayer structures consisting of alternating Si and Ge amorphous nanolayers were annealed by ultrashort laser pulses at near-infrared (1030 nm) and mid-infrared (1500 nm) wavelengths. In this paper, we investigate the effects of the type of substrate (Si or glass), and the numbe...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180334/ https://www.ncbi.nlm.nih.gov/pubmed/37176457 http://dx.doi.org/10.3390/ma16093572 |