A Coupling Mechanism between Flicker Noise and Hot Carrier Degradations in FinFETs

A coupling mechanism between flicker noise and hot carrier degradation (HCD) is revealed in this work. Predicting the flicker noise properties of fresh and aged devices is becoming essential for circuit designs, requiring an understanding of the fundamental noise behaviors. While certain models for...

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Detalles Bibliográficos
Autores principales: Liu, Minghao, Sun, Zixuan, Lu, Haoran, Shen, Cong, Zhang, Lining, Wang, Runsheng, Huang, Ru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180343/
https://www.ncbi.nlm.nih.gov/pubmed/37177052
http://dx.doi.org/10.3390/nano13091507

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180343/
https://www.ncbi.nlm.nih.gov/pubmed/37177052
http://dx.doi.org/10.3390/nano13091507

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