Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps

The incremental step pulse programming slope (ISPP) with random variation was investigated by measuring numerous three−dimensional (3D) NAND flash memory cells with a vertical nanowire channel. We stored multiple bits in a cell with the ISPP scheme and read each cell pulse by pulse. The excessive tu...

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Detalles Bibliográficos
Autores principales: Park, Chanyang, Yoon, Jun-Sik, Nam, Kihoon, Jang, Hyundong, Park, Minsang, Baek, Rock-Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180439/
https://www.ncbi.nlm.nih.gov/pubmed/37176997
http://dx.doi.org/10.3390/nano13091451

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180439/
https://www.ncbi.nlm.nih.gov/pubmed/37176997
http://dx.doi.org/10.3390/nano13091451

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