Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Detailed investigations of the pre-oxidation phosphorus implantation process are required to increase the oxidation rate in 4H-SiC metal-oxide-semiconductor (MOS) capacitors. This study focuses on the SiO(2)/SiC interface characteristics of pre-oxidation using phosphorus implantation methods. The in...

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Detalles Bibliográficos
Autores principales: Li, Shuai, Luo, Jun, Ye, Tianchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180513/
https://www.ncbi.nlm.nih.gov/pubmed/37177114
http://dx.doi.org/10.3390/nano13091568

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180513/
https://www.ncbi.nlm.nih.gov/pubmed/37177114
http://dx.doi.org/10.3390/nano13091568

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