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Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Detailed investigations of the pre-oxidation phosphorus implantation process are required to increase the oxidation rate in 4H-SiC metal-oxide-semiconductor (MOS) capacitors. This study focuses on the SiO(2)/SiC interface characteristics of pre-oxidation using phosphorus implantation methods. The in...

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Detalles Bibliográficos
Autores principales:	Li, Shuai, Luo, Jun, Ye, Tianchun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10180513/ https://www.ncbi.nlm.nih.gov/pubmed/37177114 http://dx.doi.org/10.3390/nano13091568

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