A GaN-HEMT Active Drain-Pumped Mixer for S-Band FMCW Radar Front-End Applications

This paper reports for the first time a drain-pumped (DP) mixer using Gallium Nitride (GaN) HEMT technology. Specifically, it describes a method aimed to predict the optimum bias conditions for active DP-mixers, leading to high conversion gain (CG) and linearity, along with the efficient use of the...

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Detalles Bibliográficos
Autores principales: Pagnini, Lorenzo, Collodi, Giovanni, Cidronali, Alessandro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10181673/
https://www.ncbi.nlm.nih.gov/pubmed/37177685
http://dx.doi.org/10.3390/s23094479

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10181673/
https://www.ncbi.nlm.nih.gov/pubmed/37177685
http://dx.doi.org/10.3390/s23094479

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