A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor

In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than th...

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Detalles Bibliográficos
Autores principales: Liu, Xi, Li, Mengmeng, Wu, Meile, Zhang, Shouqiang, Jin, Xiaoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10198513/
https://www.ncbi.nlm.nih.gov/pubmed/37205648
http://dx.doi.org/10.1371/journal.pone.0285320

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10198513/
https://www.ncbi.nlm.nih.gov/pubmed/37205648
http://dx.doi.org/10.1371/journal.pone.0285320

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