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A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor
In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than th...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Public Library of Science
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10198513/ https://www.ncbi.nlm.nih.gov/pubmed/37205648 http://dx.doi.org/10.1371/journal.pone.0285320 |