A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gates

A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed. Comparing to the conventional reconfigurable field effect transistor (RFET) which requires two independently powered gates, the proposed NB...

Descripción completa

Detalles Bibliográficos
Autores principales: Jin, Xiaoshi, Zhang, Shouqiang, Liu, Xi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2023
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10208489/
https://www.ncbi.nlm.nih.gov/pubmed/37224138
http://dx.doi.org/10.1371/journal.pone.0284616

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10208489/
https://www.ncbi.nlm.nih.gov/pubmed/37224138
http://dx.doi.org/10.1371/journal.pone.0284616

Ejemplares similares