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A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gates
A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed. Comparing to the conventional reconfigurable field effect transistor (RFET) which requires two independently powered gates, the proposed NB...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Public Library of Science
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10208489/ https://www.ncbi.nlm.nih.gov/pubmed/37224138 http://dx.doi.org/10.1371/journal.pone.0284616 |