Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications

[Image: see text] Zirconium-doped hafnium oxide (HfZrO(x)) is one of the promising ferroelectric materials for next-generation memory applications. To realize high-performance HfZrO(x) for next-generation memory applications, the formation of defects in HfZrO(x), including oxygen vacancies and inter...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Min-Kyu, Kim, Ik-Jyae, Lee, Jang-Sik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10210041/
https://www.ncbi.nlm.nih.gov/pubmed/37251138
http://dx.doi.org/10.1021/acsomega.3c01561

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10210041/
https://www.ncbi.nlm.nih.gov/pubmed/37251138
http://dx.doi.org/10.1021/acsomega.3c01561

Ejemplares similares