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Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications
[Image: see text] Zirconium-doped hafnium oxide (HfZrO(x)) is one of the promising ferroelectric materials for next-generation memory applications. To realize high-performance HfZrO(x) for next-generation memory applications, the formation of defects in HfZrO(x), including oxygen vacancies and inter...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10210041/ https://www.ncbi.nlm.nih.gov/pubmed/37251138 http://dx.doi.org/10.1021/acsomega.3c01561 |
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author | Kim, Min-Kyu Kim, Ik-Jyae Lee, Jang-Sik |
author_facet | Kim, Min-Kyu Kim, Ik-Jyae Lee, Jang-Sik |
author_sort | Kim, Min-Kyu |
collection | PubMed |
description | [Image: see text] Zirconium-doped hafnium oxide (HfZrO(x)) is one of the promising ferroelectric materials for next-generation memory applications. To realize high-performance HfZrO(x) for next-generation memory applications, the formation of defects in HfZrO(x), including oxygen vacancies and interstitials, needs to be optimized, as it can affect the polarization and endurance characteristics of HfZrO(x). In this study, we investigated the effects of ozone exposure time during the atomic layer deposition (ALD) process on the polarization and endurance characteristics of 16-nm-thick HfZrO(x). HfZrO(x) films showed different polarization and endurance characteristics depending on the ozone exposure time. HfZrO(x) deposited using the ozone exposure time of 1 s showed small polarization and large defect concentration. The increase of the ozone exposure time to 2.5 s could reduce the defect concentration and improve the polarization characteristics of HfZrO(x). When the ozone exposure time further increased to 4 s, a reduction of polarization was observed in HfZrO(x) due to the formation of oxygen interstitials and non-ferroelectric monoclinic phases. HfZrO(x), with an ozone exposure time of 2.5 s, exhibited the most stable endurance characteristics because of the low initial defect concentration in HfZrO(x), which was confirmed by the leakage current analysis. This study shows that the ozone exposure time of ALD needs to be controlled to optimize the formation of defects in HfZrO(x) films for the improvement of polarization and endurance characteristics. |
format | Online Article Text |
id | pubmed-10210041 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-102100412023-05-26 Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications Kim, Min-Kyu Kim, Ik-Jyae Lee, Jang-Sik ACS Omega [Image: see text] Zirconium-doped hafnium oxide (HfZrO(x)) is one of the promising ferroelectric materials for next-generation memory applications. To realize high-performance HfZrO(x) for next-generation memory applications, the formation of defects in HfZrO(x), including oxygen vacancies and interstitials, needs to be optimized, as it can affect the polarization and endurance characteristics of HfZrO(x). In this study, we investigated the effects of ozone exposure time during the atomic layer deposition (ALD) process on the polarization and endurance characteristics of 16-nm-thick HfZrO(x). HfZrO(x) films showed different polarization and endurance characteristics depending on the ozone exposure time. HfZrO(x) deposited using the ozone exposure time of 1 s showed small polarization and large defect concentration. The increase of the ozone exposure time to 2.5 s could reduce the defect concentration and improve the polarization characteristics of HfZrO(x). When the ozone exposure time further increased to 4 s, a reduction of polarization was observed in HfZrO(x) due to the formation of oxygen interstitials and non-ferroelectric monoclinic phases. HfZrO(x), with an ozone exposure time of 2.5 s, exhibited the most stable endurance characteristics because of the low initial defect concentration in HfZrO(x), which was confirmed by the leakage current analysis. This study shows that the ozone exposure time of ALD needs to be controlled to optimize the formation of defects in HfZrO(x) films for the improvement of polarization and endurance characteristics. American Chemical Society 2023-05-08 /pmc/articles/PMC10210041/ /pubmed/37251138 http://dx.doi.org/10.1021/acsomega.3c01561 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
spellingShingle | Kim, Min-Kyu Kim, Ik-Jyae Lee, Jang-Sik Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications |
title | Defect Engineering of Hafnia-Based Ferroelectric Materials
for High-Endurance Memory Applications |
title_full | Defect Engineering of Hafnia-Based Ferroelectric Materials
for High-Endurance Memory Applications |
title_fullStr | Defect Engineering of Hafnia-Based Ferroelectric Materials
for High-Endurance Memory Applications |
title_full_unstemmed | Defect Engineering of Hafnia-Based Ferroelectric Materials
for High-Endurance Memory Applications |
title_short | Defect Engineering of Hafnia-Based Ferroelectric Materials
for High-Endurance Memory Applications |
title_sort | defect engineering of hafnia-based ferroelectric materials
for high-endurance memory applications |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10210041/ https://www.ncbi.nlm.nih.gov/pubmed/37251138 http://dx.doi.org/10.1021/acsomega.3c01561 |
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