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Defect Engineering of Hafnia-Based Ferroelectric Materials for High-Endurance Memory Applications
[Image: see text] Zirconium-doped hafnium oxide (HfZrO(x)) is one of the promising ferroelectric materials for next-generation memory applications. To realize high-performance HfZrO(x) for next-generation memory applications, the formation of defects in HfZrO(x), including oxygen vacancies and inter...
Autores principales: | Kim, Min-Kyu, Kim, Ik-Jyae, Lee, Jang-Sik |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10210041/ https://www.ncbi.nlm.nih.gov/pubmed/37251138 http://dx.doi.org/10.1021/acsomega.3c01561 |
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