Ferroelectric Orthorhombic ZrO(2) Thin Films Achieved Through Nanosecond Laser Annealing

A new approach for the stabilization of the ferroelectric orthorhombic ZrO(2) films is demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiO (x) /W(14 nm)/ZrO(2)(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL...

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Detalles Bibliográficos
Autores principales: Crema, Anna P. S., Istrate, Marian C., Silva, Alexandre, Lenzi, Veniero, Domingues, Leonardo, Hill, Megan O., Teodorescu, Valentin S., Ghica, Corneliu, Gomes, Maria J. M., Pereira, Mario, Marques, Luís, MacManus‐Driscoll, Judith L., Silva, José P. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214231/
https://www.ncbi.nlm.nih.gov/pubmed/36950722
http://dx.doi.org/10.1002/advs.202207390

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214231/
https://www.ncbi.nlm.nih.gov/pubmed/36950722
http://dx.doi.org/10.1002/advs.202207390

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