Cargando…
Ferroelectric Orthorhombic ZrO(2) Thin Films Achieved Through Nanosecond Laser Annealing
A new approach for the stabilization of the ferroelectric orthorhombic ZrO(2) films is demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiO (x) /W(14 nm)/ZrO(2)(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL...
Autores principales: | Crema, Anna P. S., Istrate, Marian C., Silva, Alexandre, Lenzi, Veniero, Domingues, Leonardo, Hill, Megan O., Teodorescu, Valentin S., Ghica, Corneliu, Gomes, Maria J. M., Pereira, Mario, Marques, Luís, MacManus‐Driscoll, Judith L., Silva, José P. B. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214231/ https://www.ncbi.nlm.nih.gov/pubmed/36950722 http://dx.doi.org/10.1002/advs.202207390 |
Ejemplares similares
-
Nanoengineering room temperature ferroelectricity into orthorhombic SmMnO(3) films
por: Choi, Eun-Mi, et al.
Publicado: (2020) -
The Study of the Influence of ZrO(2) Precursor Type and the Temperature of Annealing on the Crystallization of the Tetragonal Polymorph of ZrO(2) in Zirconia-Silica Gels
por: Adamczyk, Anna
Publicado: (2022) -
ZrO(2) Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
por: Liu, Huan, et al.
Publicado: (2020) -
High Mobility Ge pMOSFETs with ZrO(2) Dielectric: Impacts of Post Annealing
por: Liu, Huan, et al.
Publicado: (2019) -
Thermal effect of annealing-temperature on solution-processed high-k ZrO(2) dielectrics
por: Zhou, Shangxiong, et al.
Publicado: (2019)