Gallium Nitride Based Electrode for High‐Temperature Supercapacitors

Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐based devices...

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Detalles Bibliográficos
Autores principales: Lv, Songyang, Wang, Shouzhi, Li, Lili, Xie, Shoutian, Yu, Jiaoxian, Zhong, Yueyao, Wang, Guodong, Liang, Chang, Xu, Xiangang, Zhang, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214239/
https://www.ncbi.nlm.nih.gov/pubmed/36965081
http://dx.doi.org/10.1002/advs.202300780

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214239/
https://www.ncbi.nlm.nih.gov/pubmed/36965081
http://dx.doi.org/10.1002/advs.202300780

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