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Gallium Nitride Based Electrode for High‐Temperature Supercapacitors

Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐based devices...

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Detalles Bibliográficos
Autores principales: Lv, Songyang, Wang, Shouzhi, Li, Lili, Xie, Shoutian, Yu, Jiaoxian, Zhong, Yueyao, Wang, Guodong, Liang, Chang, Xu, Xiangang, Zhang, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214239/
https://www.ncbi.nlm.nih.gov/pubmed/36965081
http://dx.doi.org/10.1002/advs.202300780
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author Lv, Songyang
Wang, Shouzhi
Li, Lili
Xie, Shoutian
Yu, Jiaoxian
Zhong, Yueyao
Wang, Guodong
Liang, Chang
Xu, Xiangang
Zhang, Lei
author_facet Lv, Songyang
Wang, Shouzhi
Li, Lili
Xie, Shoutian
Yu, Jiaoxian
Zhong, Yueyao
Wang, Guodong
Liang, Chang
Xu, Xiangang
Zhang, Lei
author_sort Lv, Songyang
collection PubMed
description Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO(2) )heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO(2) with massive active sites. The GaN/NiCoO(2) heterostructure‐based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm(−2) and power density, as well as superior service life at 130 °C. The theoretical calculation further explains that the reason for the energy storage enhancement of the GaN/NiCoO(2) is due to the presence of the built‐in electric fields. This work offers a novel perspective for meeting the practical application of GaN‐based energy storage devices with exceptional performance capable of operation under high‐temperature environments.
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spelling pubmed-102142392023-05-27 Gallium Nitride Based Electrode for High‐Temperature Supercapacitors Lv, Songyang Wang, Shouzhi Li, Lili Xie, Shoutian Yu, Jiaoxian Zhong, Yueyao Wang, Guodong Liang, Chang Xu, Xiangang Zhang, Lei Adv Sci (Weinh) Research Articles Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility. Nonetheless, it is an essential challenge for GaN‐based devices to improve energy storage. Herein, an innovative strategy is proposed by constructing GaN/Nickel cobalt oxygen (NiCoO(2) )heterostructure for enhanced supercapacitors (SCs). Benefiting from the synergy effect between the porous GaN network as a highly conductive skeleton and the NiCoO(2) with massive active sites. The GaN/NiCoO(2) heterostructure‐based SCs with ion liquids electrolyte are assembled and delivered an impressive energy density of 15.2 µWh cm(−2) and power density, as well as superior service life at 130 °C. The theoretical calculation further explains that the reason for the energy storage enhancement of the GaN/NiCoO(2) is due to the presence of the built‐in electric fields. This work offers a novel perspective for meeting the practical application of GaN‐based energy storage devices with exceptional performance capable of operation under high‐temperature environments. John Wiley and Sons Inc. 2023-03-25 /pmc/articles/PMC10214239/ /pubmed/36965081 http://dx.doi.org/10.1002/advs.202300780 Text en © 2023 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Lv, Songyang
Wang, Shouzhi
Li, Lili
Xie, Shoutian
Yu, Jiaoxian
Zhong, Yueyao
Wang, Guodong
Liang, Chang
Xu, Xiangang
Zhang, Lei
Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
title Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
title_full Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
title_fullStr Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
title_full_unstemmed Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
title_short Gallium Nitride Based Electrode for High‐Temperature Supercapacitors
title_sort gallium nitride based electrode for high‐temperature supercapacitors
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214239/
https://www.ncbi.nlm.nih.gov/pubmed/36965081
http://dx.doi.org/10.1002/advs.202300780
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