Improved electrical properties of micro light-emitting diode displays by ion implantation technology

Generally, the inductively coupled plasma-reactive ion etching (ICP-RIE) mesa technology was used to remove p-GaN/MQWs and expose n-GaN for electrical contact in a fabricated micro light-emitting diode (μLED). In this process, the exposed sidewalls were significantly damaged which result in small-si...

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Detalles Bibliográficos
Autores principales: Hsu, Yu-Hsuan, Wang, Chi-Han, Lin, Xin-Dai, Lin, Yi-Hsin, Wuu, Dong-Sing, Horng, Ray-Hua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214901/
https://www.ncbi.nlm.nih.gov/pubmed/37382729
http://dx.doi.org/10.1186/s11671-023-03819-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214901/
https://www.ncbi.nlm.nih.gov/pubmed/37382729
http://dx.doi.org/10.1186/s11671-023-03819-3

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